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Quantum interference effects in highly doped N-ZnSe epitaxy layers grown by MBE
| Content Provider | Semantic Scholar |
|---|---|
| Author | Shao, H. Gerschütz, J. Scholl, Stephan Schaefer, Hartmut Dr. Jobst, B. Hommel, Detlef Landwehr, G. |
| Copyright Year | 1998 |
| Abstract | Magnetotransport investigations of quantum interference effects at temperatures down to 0.35 K in a series of highly n-doped MBE-grown ZnSe epitaxy layers with electron densities from 8.2 x 10 17 to 7.5 x 10 18 cm -3 are presented. We observed a negative magnetoresistance in all samples studied. The change of magnetoconductivy Δσ xx (B) shows a linear dependence on the square root of the magnetic field. The slope of the √B dependence approaches the universal value predicted by weak localization (WL) theory when the temperature is reduced to 0.35 K and the electron density is well on the metallic side of the metal-insulator transition (MIT). The temperature exponent of the estimated phase coherence time τ φ is around unity. |
| Starting Page | 575 |
| Ending Page | 582 |
| Page Count | 8 |
| File Format | PDF HTM / HTML |
| DOI | 10.1002/(SICI)1521-3951(199804)206:2<575::AID-PSSB575>3.0.CO;2-7 |
| Volume Number | 206 |
| Alternate Webpage(s) | http://www.wiley-vch.de/contents/jc_2232/206/575_a.pdf |
| Alternate Webpage(s) | https://doi.org/10.1002/%28SICI%291521-3951%28199804%29206%3A2%3C575%3A%3AAID-PSSB575%3E3.0.CO%3B2-7 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
