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Semconductor Device with Asymmetric Channel Dopant Profile Related Application
| Content Provider | Semantic Scholar |
|---|---|
| Copyright Year | 2017 |
| Abstract | Short channel effects are curtailed thereby increasing inte grated circuit Speed by forming a channel dopant with an asymmetric impurity concentration profile. Embodiments include ion implanting Si or Ge at a large tilt angle to amorphize a portion of a designated channel region with a varying degree of amorphization decreasing from the intended drain region to the intended Source region, Sub Stantially vertically ion implanting channel dopant impuri ties and annealing. During annealing, diffusion is retarded in areas of increased amorphization, thereby forming an asym metric impurity concentration gradient acroSS the channel region increasing in the direction of the Source region. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://patentimages.storage.googleapis.com/1b/7c/83/664234948a8159/US6410393.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Patent |
