S % & uu 3002 fuk ( r — Stress Engineering during Metalorganic Chemical Vapor Deposition of AIGaN / GaN Distributed Bragg Reflectors

Content Provider	Semantic Scholar
Author	Waldrip, Karen Elizabeth Zhou, Huanbo Nurmikko, Arto V.
Copyright Year	2000
Abstract	In-situ stress monitoring has been employed during metalorganic chemical vapor deposition of AIGaN/GaN distributed Bragg reflectors (DBRs). It was found that the insertion of multiple AIN interlayers is effective in converting the tensile growth stress typically observed in this system into compression, thus alleviating the problem of crack generation. Crack-free growth of a 60-pair Alo.z5G~.75N/GaN quarter-wavelength DBR was obtained over the entire two-inch wafer; an accompanying reflectivity of at least 9970 was observed near the peak wavelength around 380 nm.
File Format	PDF HTM / HTML
Alternate Webpage(s)	https://digital.library.unt.edu/ark:/67531/metadc715731/m2/1/high_res_d/767862.pdf
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article