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Epitaxial Growths of m-Plane AlGaN/GaN and AlInN/GaN Heterostructures Applicable for Normally-Off Mode High Power Field Effect Transistors on Freestanding GaN Substrates
| Content Provider | Semantic Scholar |
|---|---|
| Author | Chichibu, Shigefusa F. Hazu, Kouji |
| Copyright Year | 2011 |
| Abstract | Abstract : Non-polar m-plane AlxGa1-xN and Al1-xInxN alloy films and heterostructures were grown by metalorganic vapor phase epitaxy (MOVPE) in order to obtain fundamental understandings on the growth of m-plane nitrides and carrier transport mechanisms. These alloys are being investigated for potential use in normally-off heterojunction field effect transistors (HFETs). |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://apps.dtic.mil/dtic/tr/fulltext/u2/a548346.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |