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Multi-subband ensemble Monte Carlo study of tunneling leakage mechanisms
| Content Provider | Semantic Scholar |
|---|---|
| Author | Medina-Bailón, Cristina Sampedro, Carlos Padilla, J. L. Godoy, Andrés Donetti, Luca Gámiz, Francisco Sadi, Toufik Georgiev, Vihar P. Asenov, A. |
| Copyright Year | 2017 |
| Abstract | The reduction of the critical dimensions of transistor architectures makes mandatory the inclusion of quantum effects different than standard confinement becomes in advanced device simulators to describe the electrical behavior. In particular, direct tunneling from source to drain, band-to-band tunneling and gate leakage mechanisms considering direct and trap assisted tunneling are of especial interest. This work presents a study of these mechanisms in Fully Depleted Silicon-On- Insulator (FDSOI) and FinFET devices using a Multi-Subband Ensemble Monte Carlo (MS-EMC) simulator. |
| Starting Page | 281 |
| Ending Page | 284 |
| Page Count | 4 |
| File Format | PDF HTM / HTML |
| DOI | 10.23919/SISPAD.2017.8085319) |
| Alternate Webpage(s) | http://eprints.gla.ac.uk/155435/1/155435.pdf |
| Alternate Webpage(s) | http://in4.iue.tuwien.ac.at/pdfs/sispad2017/SISPAD_2017_281-284.pdf |
| Alternate Webpage(s) | https://doi.org/10.23919/SISPAD.2017.8085319%29 |
| Journal | 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
