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Epitaxial Growth of Single-Crystal Ultrathin Films of Bismuth on Si(111).
| Content Provider | Semantic Scholar |
|---|---|
| Author | Nagao, Tadaaki Doi, Takumi Sekiguchi, Takeharu Hasegawa, Shuji |
| Copyright Year | 2000 |
| Abstract | We have studied the epitaxial growth of bismuth overlayers on Si(111) surfaces by in situ reflection high-energy electron diffraction (RHEED) and scanning tunneling microscopy (STM). Lateral growth of texture two-dimensional (2D) nanocrystals takes place after the formation of an initial disordered wetting layer on the 7×7 DAS structure. After the coalescence of the texture 2D nanocrystals, alignment in their azimuthal orientation takes place. At slightly more than 15 monolayers, the growth front of the overlayer exhibits a perfectly long-range ordered Bi(0001)-1×1 surface. The films prepared on Si(111)-α-√3×√3-Bi or on Si(111)-β-√3×√3-Bi do not show as good quality as those on Si(111)-7×7. Thus, the initial disordered wetting layer formed on the 7×7 surface successfully accommodates the large 18% lattice mismatch between the Si(111) and Bi(0001) planes and allows the 2D nanocrystal to grow laterally. |
| Starting Page | 4567 |
| Ending Page | 4570 |
| Page Count | 4 |
| File Format | PDF HTM / HTML |
| DOI | 10.1143/JJAP.39.4567 |
| Volume Number | 39 |
| Alternate Webpage(s) | http://www-surface.phys.s.u-tokyo.ac.jp/papers/2000/NagaoJJAP_00.pdf |
| Alternate Webpage(s) | https://doi.org/10.1143/JJAP.39.4567 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
