NDLI: Improved performance of organic light-emitting diode with vanadium pentoxide layer on the FTO surface

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Improved performance of organic light-emitting diode with vanadium pentoxide layer on the FTO surface

Content Provider	Semantic Scholar
Author	Saikia, Dhrubajyoti Sarma, Rohit
Copyright Year	2017
Abstract	Vanadium pentoxide layer deposited on the fluorine-doped tin oxide (FTO) anode by vacuum deposition has been investigated in organic light-emitting diode (OLED). With 12 nm optimal thickness of $\hbox {V}_{2}\hbox {O}_{5}$V2O5, the luminance efficiency is increased by 1.66 times compared to the single FTO-based OLED. The improvement of current efficiency implies that there is a better charge injection and better controlling of hole current. To investigate the performance of OLED by the buffer layer, $\hbox {V}_{2}\hbox {O}_{5}$V2O5 films of different thicknesses were deposited on the FTO anode and their J–V and L–V characteristics were studied. Further analysis was carried out by measuring sheet resistance, optical transmittance and surface morphology with the FE-SEM images. This result indicates that the $\hbox {V}_{2}\hbox {O}_{5}$V2O5 (12 nm) buffer layer is a good choice for increasing the efficiency of FTO-based OLED devices within the tunnelling region. Here the maximum value of current efficiency is found to be 2.83 cd / A.
Starting Page	1
Ending Page	6
Page Count	6
File Format	PDF HTM / HTML
DOI	10.1007/s12043-017-1389-9
Volume Number	88
Alternate Webpage(s)	https://www.ias.ac.in/article/fulltext/pram/088/06/0083
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article

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