Title Molecular-beam epitaxial growth of insulating AlN on surface- controlled 6H-SiC substrate by HCl gas etching

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Growth of Nitrogen-Polar 2H-AlN on Step-Height-Controlled 6H-SiC(0001̄) Substrate by Molecular-Beam Epitaxy

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Epitaxial growth of 6H-AlN on M-plane SiC by plasma-assisted molecular beam epitaxy

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Effects of 6H-SiC surface reconstruction on lattice relaxation of AlN buffer layers in molecular-beam epitaxial growth of GaN

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Stress evolution of GaN/AlN heterostructure grown on 6H-SiC substrate by plasma assisted molecular beam epitaxy

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Effect of tilt angle on the morphology of sic epitaxial films grown on vicinal (0001)sic substrates.

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Study of surface morphologies of on-axis 6h-sic wafer after high-temperature etching and epitaxial growth.

Optical Characteristic of the Strain-Controlled GaN Epitaxial Layer Grown on 6H-SiC Substrate by an Adapting (GaN/AlN) Multibuffer Layer

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△Control of nucleation for HVPE growth of AlN on 6H-SiC substrate

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