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Solid-state backscattered-electron detector for sub-keV imaging in scanning electron microscopy
| Content Provider | Semantic Scholar |
|---|---|
| Author | Sakic, Agata Nanver, Lis K. Veen, Gerard Van Kooijman, K. Vogelsang, Patrick Scholtes, T. L. M. Boer, W. Bastiaan De Wien, W. H. A. Srđan Milosavljević Heerkens, Carel Th. H. Knežević, Tihomir Spee, Ida |
| Copyright Year | 2011 |
| Abstract | The low-energy electron detectors presented in this work have near theoretical electron signal gain at low energies measured down to 200 eV and high-speed response due to the following technological steps: (i) chemical vapor deposition (CVD) of boron layers (PureB layers) proven to form an ideal nm-deep p+n junction with the outstanding sensitivity to low-energy electrons [1], and (ii) defect-free, ultra-low doped, 40 ?m thick n-- epitaxial layer which facilitates capacitance values as low as 3 pF/mm2. The fabricated detectors have been placed in SEMs and the resulting high-resolution images, robustness to the electron irradiation, and high scanning speeds make them promising candidates for the future solid-state backscatteredelectron (BSE) detectors. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://repository.tudelft.nl/islandora/object/uuid:70dd658f-eab3-46fb-8485-29b1db43c785/datastream/OBJ/download |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
