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A Low Phase-Noise $X$-Band MMIC VCO Using High-Linearity and Low-Noise Composite-Channel ${\hbox{Al}}_{0.3}{\hbox{Ga}}_{0.7}{\hbox{N/Al}}_{0.05}{\hbox{Ga}}_{0.95}{\hbox{N/GaN}}$ HEMTs
| Content Provider | Semantic Scholar |
|---|---|
| Author | Cheng, Z. Q. Cai, Yong Zhi Zhou, Yugang Chen, K. J. |
| Copyright Year | 2007 |
| Abstract | A low phase-noise X-band monolithic-microwave integrated-circuit voltage-controlled oscillator (VCO) based on a novel high-linearity and low-noise composite-channel Al0.3Ga0.7N/Al0.05Ga0.95 N/GaN high electron mobility transistor (HEMT) is presented. The HEMT has a 1 mumtimes100 mum gate. A planar inter-digitated metal-semiconductor-metal varactor is used to tune the VCO's frequency. The polyimide dielectric layer is inserted between a metal and GaN buffer to improve the Q factor of spiral inductors. The VCO exhibits a frequency tuning range from 9.11 to 9.55 GHz with the varactor's voltage from 4 to 6 V, an average output power of 3.3 dBm, and an average efficiency of 7% at a gate bias of -3 V and a drain bias of 5 V. The measured phase noise is -82 dBc/Hz and -110 dBc/Hz at offsets of 100 kHz and 1 MHz at a varactor's voltage (Vtune)=5 V. The phase noise is the lowest reported thus far in VCOs made of GaN-based HEMTs. In addition, the VCO also exhibits the minimum second harmonic suppression of 47 dBc. The chip size is 1.2times1.05 mm2 |
| Starting Page | 23 |
| Ending Page | 29 |
| Page Count | 7 |
| File Format | PDF HTM / HTML |
| DOI | 10.1109/tmtt.2006.888942 |
| Alternate Webpage(s) | http://www.ece.ust.hk/~ptc/Papers/2007/MTTJan07.pdf |
| Alternate Webpage(s) | https://doi.org/10.1109/tmtt.2006.888942 |
| Volume Number | 55 |
| Journal | IEEE Transactions on Microwave Theory and Techniques |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
