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Ferromagnetism in dilute magnetic semiconductors through defect engineering: Li-doped ZnO.
| Content Provider | Semantic Scholar |
|---|---|
| Author | Yi, Junjian Lim, Chjan C. Xing, Guang Zhong Fan, Hai Ming Van, Liew Hugh Huang, Scott L. Yang, Kai Huang, Xuelian Wang, Bingbing Wu, Te-Ho. Wang, Liangyu Zhang, Hou Tian Gao, Xinxin Wee, Andrew Thye Shen Feng, Yuan Ping Ding, Junjia |
| Copyright Year | 2010 |
| Abstract | We demonstrate, both theoretically and experimentally, that cation vacancy can be the origin of ferromagnetism in intrinsic dilute magnetic semiconductors. The vacancies can be controlled to tune the ferromagnetism. Using Li-doped ZnO as an example, we found that while Li itself is nonmagnetic, it generates holes in ZnO, and its presence reduces the formation energy of Zn vacancy, and thereby stabilizes the zinc vacancy. Room temperature ferromagnetism with p type conduction was observed in pulsed laser deposited ZnO:Li films with certain doping concentration and oxygen partial pressure. |
| Starting Page | 137201 |
| Ending Page | 137201 |
| Page Count | 1 |
| File Format | PDF HTM / HTML |
| DOI | 10.1103/PhysRevLett.104.137201 |
| PubMed reference number | 20481907 |
| Journal | Medline |
| Volume Number | 104 |
| Issue Number | 13 |
| Alternate Webpage(s) | http://www.physics.nus.edu.sg/student/document/e137201-PRL.pdf |
| Alternate Webpage(s) | https://nanooxides.kaust.edu.sa/Documents/publications/72.pdf |
| Alternate Webpage(s) | https://doi.org/10.1103/PhysRevLett.104.137201 |
| Journal | Physical review letters |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
