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Charge State of Indium and Point Defects in Indium-Doped Lead Telluride Crystals
| Content Provider | Semantic Scholar |
|---|---|
| Author | Freik, Dmytro Boichuk, V. M. Mezhilovskaya, L. I. |
| Copyright Year | 2004 |
| Abstract | Experimental data on the lattice parameter, thermoelectric power, and microhardness of PbTe〈In〉 crystals and the conversion fromp- to n-type with increasing indium content can be interpreted under the assumption that the indium in PbTe〈In〉 has variable valence: 2In2+ ↔ In+ + In3+. A crystal-quasi-chemical model is proposed for defect formation in PbTe〈In〉: the incorporation of In+ into octahedral interstices and In3+ into tetrahedral interstices of the close packing of Te atoms, accompanied by In2Te3 precipitation. |
| Starting Page | 1026 |
| Ending Page | 1031 |
| Page Count | 6 |
| File Format | PDF HTM / HTML |
| DOI | 10.1023/B:INMA.0000046462.80064.d8 |
| Volume Number | 40 |
| Alternate Webpage(s) | https://page-one.springer.com/pdf/preview/10.1023/B:INMA.0000046462.80064.d8 |
| Alternate Webpage(s) | https://doi.org/10.1023/B%3AINMA.0000046462.80064.d8 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |