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Singlemode (SMSR > 40 dB) proton-implanted photonic crystal vertical-cavity surface-emitting lasers - Electronics Letters
| Content Provider | Semantic Scholar |
|---|---|
| Author | Yang, H. P. Yu, Hui Chia Sung, Cho Pil |
| Copyright Year | 2001 |
| Abstract | Introduction: Vertical-cavity surface-emitting lasers (VCSELs) have attracted much attention in recent years. High-power, singlemode operation is desired for a number of applications, including highspeed laser printing, optical storage and long-wavelength telecommunications. For oxide-confined VCSELs, the current-confined aperture must be less than 3 mm in diameter to ensure stable singlemode operation. However, the large resistance inherited from the small aperture limits the modulation bandwidth and degrades the highspeed performance. Furthermore, the lifetime of the oxide VCSEL decreases proportionally as the diameter of the oxide aperture declines, even when the device is operated at a reduced current [1]. Techniques reported to fabricate fundamental mode from an oxide-confined VCSEL with larger emission area include increasing the higher-order mode loss by surface-relief etching [2] and hybrid oxide-implanted VCSELs [3, 4]. Recently, a two-dimensional photonic crystal (2-D PC) structure formed on a VCSEL surface has been investigated as a control method of lateral mode. Singlemode output with higher output power, were realised from larger aperture photonic crystal VCSELs (PCVCSELs) [5, 6]. However, those PC-VCSELs exhibit relatively high threshold currents (Ith) owing to large oxide confined apertures. In this Letter, we design a low Ith, high-power, single-lateral-mode operation VCSEL by employing proton implantation and a single-point defect photonic crystal index guiding layer. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://ir.nctu.edu.tw/bitstream/11536/13892/1/000227906000026.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |