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Rapid thermal processing of WSi , contacts to InP in low-pressure N 2 : H 2 and tertiarybutylphosphine ambients
| Content Provider | Semantic Scholar |
|---|---|
| Author | Katz, Alexander Feingold, Aviram Nakahara, Seiji |
| Copyright Year | 2011 |
| Abstract | WSi, thin films deposited on InP substrates have been investigated for possible use as refractory ohmic contact materials for self-aligned laser devices. The films have been rf diode sputtered using various Ar gas pressures from a single commercial target composed of W and Si with an atomic ratio of 1:l. Following the deposition, the WSiJInP samples were rapid thermal processed using a rapid thermal metalorganic chemical vapor deposition system in a controlled low-pressure ambient of NsH, (9:l) and tertiarybutylphosphine. The as-deposited films ( 100 nm thick) were amorphous but crystallized iI? the temperature range of 600-650 “C. The WSi, phase forms first at 600 “C and then the W,Si3 nucleate with further heating at 650 “C. As a result of the crystallization, a reduction in the specific contact resistance to a value of 7.5 x 10 6 0, cm* and a decrease in the sheet resistance to values lower than 2 n/Cl were observed. In addition, a significant reduction in the internal stress and an improvement in the WSi,-to-InP adhesion were found, demonstrating the potential of WSi, as a contact material for InP-based self-aligned devices. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | http://swamp.mse.ufl.edu/articles/1991/Katz_1991_JApplPhys_69_7664.pdf |
| Language | English |
| Access Restriction | Open |
| Subject Keyword | 3D film Alignment Chemical vapor deposition Chlorine Crystal Structure Crystallization Deuterium Diode Device Component Heating Metalorganic vapour phase epitaxy Ohmic contact RF modulator Rapid thermal processing Sheet resistance Silicon Vacuum deposition are unit of measure |
| Content Type | Text |
| Resource Type | Article |
