NDLI: Wheatstone-Bridge Readout Interface for ISFET-Based Applications

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Wheatstone-Bridge Readout Interface for ISFET-Based Applications

Content Provider	Semantic Scholar
Author	Morgenshtein, Arkadiy Dinnar, Uri Jackobson, Claudio G. Nemirovsky, Yael
Copyright Year	2002
Abstract	The ISFET sensor’s integration in clinical applications for pH and pCO2 measurements [1,2] demands developing of high-performance analog interfaces. One of the most important required features is the temperature compensation. Wheatstone-Bridge technique is widely used in numerous measurement applications [3], as resistance measurements, strain gauges, etc. due to its exclusive structure that allows reduced temperature sensitivity. The novel ISFET readout interface based on Wheatstone-Bridge configuration is presented in this paper. Feedback implementation and a combination of ISFET and MOSFET devices in on-chip integrated structure, allows high system accuracy, low temperature sensitivity and compatibility for CMOSbased applications. Operational analysis, simulation results and a 4X4mm2 test chip fabricated for future applications are presented. Two important properties can be derived from (1): (a) the changes in resistance due to temperature fluctuations result in zero total contribution to Vg, assuming similar influence of temperature on devices, (b) changes in channel resistance of ISFET will contribute to Vg change. The operational amplifier detects this change and feedback is applied to the reference electrode or the gate of MOSFET, to maintain the balance of the bridge. The value of the
File Format	PDF HTM / HTML
Alternate Webpage(s)	http://webee.technion.ac.il/Sites/People/YaelNemirovsky/Download/Publications/Journal-Conference-Publications/BIOMEMS-ISFETS/7_102_C93.pdf
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article

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