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On the Charge Storage and Decay Mechanism in Silicon Dioxide Elect rets
| Content Provider | Semantic Scholar |
|---|---|
| Author | Olthuis, Wouter Bergveld, Piet |
| Abstract | In this paper, a mechanism for both the storage and the decay of charge in a charged silicon dioxide layer is proposed. The oxide layer needs n e u t r a l electron traps to obtain stable trapped negative charge, a f t e r having been charged, resulting in an electret that can be applied in microphones. The depro-tonbation of the silanol groups, followed by charge injection, results in an electrochemical reaction with immobile SiO-as one of the reaction products. Decay of the stable charge thus obtained, c a n occur b y the clustering of water molecules at inner silanol groups, resulting in a conductive hydrogen bonded network, which eventually leads to the discharge of the elec-tret. Measurement results are presented, showing a considerable decrease in surface conductivity, a f t e r having grafted the Si02 surface, resulting in covalently bonded, relatively long oc-tadecyl dimethyl silane chains. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | http://doc.utwente.nl/15307/1/00155784.pdf |
| Language | English |
| Access Restriction | Open |
| Subject Keyword | Charge (electrical) Cluster analysis Contraceptives, Oral Discharger Electrical engineering Electron Hydrogen Microphone SIO (software) Silicon Dioxide dimethyl fumarate silane silanol statistical cluster |
| Content Type | Text |
| Resource Type | Article |
