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Reduction of etching plasma damage on low dielectric constant fluorinated amorphous carbon films by multiple H2 plasma treatment
| Content Provider | Semantic Scholar |
|---|---|
| Author | Shieh, Jia-Min Tsai, Kou-Chiang Dai, Bau-Tong Wu, Yew Chung Sermon |
| Copyright Year | 2002 |
| Abstract | Two-step hydrogen plasma treatment on low dielectric constant (low-k) fluorinated amorphous carbon films (a-C:F) was conducted to improve their thermal stability and reduce the damage caused by the patterning processes. First, hydrogen plasma treatment repairs imperfect bonds of as-deposited a-C:F films, stabilizing their chemical structures and increasing their resistance against elevated thermal stresses. After this passivation process, an additional hydrogen plasma treatment was applied to a-C:F films that had been etched using a mixture of N2+O2+CHF3, enabling sub-130 nm damascene trenches to be patterned and repairing the chemical structures destroyed by the etching plasma. |
| Starting Page | 1476 |
| Ending Page | 1481 |
| Page Count | 6 |
| File Format | PDF HTM / HTML |
| DOI | 10.1116/1.1494067 |
| Volume Number | 20 |
| Alternate Webpage(s) | https://ir.nctu.edu.tw/bitstream/11536/28688/1/000177510500034.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
