NDLI: Evolution of RESET current and filament morphology in low-power HfO2 unipolar resistive switching memory

Content Provider	Semantic Scholar
Author	Hou, Tuo-Hung Lin, Kuan-Liang Shieh, Jiann Lin, Jun-Hung Chou, Cheng-Tung Lee, Yao-Jen
Copyright Year	2011
Abstract	Reduction in RESET current is crucial for future high-density resistive-switching memory. We have reported a unipolar-switching Ni/HfO2/Si structure with low RESET current of 50 μA and RESET power of 30 μW. In addition, a unique cycling evolution of RESET current across more than two orders of magnitude allows us to probe into the evolvement of filament morphology at nanoscale, using a simple yet quantitative model. Filament morphology was found to depend strongly on the charge-dissipation current proportional to the powers of SET voltage. Moreover, the formation of inactive semiconductive filaments plays an important role in the reduction in RESET current.
Starting Page	103511
Ending Page	103511
Page Count	1
File Format	PDF HTM / HTML
DOI	10.1063/1.3565239
Volume Number	98
Alternate Webpage(s)	http://cpanel-199-19.nctu.edu.tw/~thhou/publication/2011_APL_98_103511.pdf
Alternate Webpage(s)	https://doi.org/10.1063/1.3565239
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article

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