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Design and Testing of a Radiation Hardened 13-bit 80 MS / s Pipeline ADC Implemented in a 90 nm Standard CMOS Process
| Content Provider | Semantic Scholar |
|---|---|
| Author | Paulino, Nuno Góes, J. M. Rodrigues, Mauricio M. Faria, Priscila Conceição Monteiro, Ralph G. Penetra, N. Domingues, Tiago |
| Copyright Year | 2008 |
| Abstract | High speed, high resolution ADCs are very important for communication and imaging systems. In space applications, the ADCs need to work in a harsh environment, subjected to severe temperature variations and high energy radiation effects, which makes the design of ADCs more challenging. This paper describes the design and implementation in silicon of a new high-speed high-resolution ADC that improves linearity, energy-efficiency, cost and reliability for space applications. The ADC is designed to have a resolution of 13-bits and an effective-number-of-bits (ENOB, e.g. linearity) equivalent to 10.5-bits; a sampling frequency of 80MS/s and an energy-efficiency better than 0.7 pico-Joule per conversion step. The ADC is designed in a standard 90nm 1-poly 8-metals CMOS process to lower the manufacturing costs and has a nominal operating voltage of 1.2V. The ADC design guaranties robustness of the custom designed mixed analogue-digital sections against power supply voltage variations, temperature variations and radiation effects. The performance of the ADC was experimentally characterized for normal operation and for a TID of 100krad(Si). The circuit was also tested for SEL under heavy ions radiation. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://run.unl.pt/bitstream/10362/4055/1/Goes_2008.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |