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Monte Carlo simulation of surface charge effects in T-branch nanojunctions
| Content Provider | Semantic Scholar |
|---|---|
| Author | Gonzalez, Tomas Íñiguez-De-La-Torre, Ignacio Pardo, Daniel Mateos, Javier Bollaert, Sylvain Roelens, Yannick Cappy, Alain |
| Copyright Year | 2008 |
| Abstract | We analyze the influence of the surface charge on the operation of ballistic T-branch junctions based on InAlAs/InGaAs layers by means of a semi-classical 2-D Monte Carlo simulator. A new self-consistent model in which the local value of the surface charge is dynamically adjusted depending on the surrounding carrier density is used in the calculations. The rectifying behaviour exhibited by these devices (down-bending shape of the output voltage VC as a function of the applied voltage VR = -VL =V) is found to be much influenced by the surface charge. A satisfactory agreement is achieved between simulated results and experimental measurements. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) |
| Starting Page | 94 |
| Ending Page | 97 |
| Page Count | 4 |
| File Format | PDF HTM / HTML |
| DOI | 10.1002/pssc.200776512 |
| Alternate Webpage(s) | http://nanoelec.usal.es/assets/publications/8417PSSc-hcis15-tbjs.pdf |
| Alternate Webpage(s) | https://doi.org/10.1002/pssc.200776512 |
| Volume Number | 5 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |