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Surface Passivation of N-type Si Surfaces Using SiO2 Grown by Atmospheric-Pressure Plasma Oxidation
| Content Provider | Semantic Scholar |
|---|---|
| Author | Zhuo, Zeteng Ohnishi, Takayuki Goto, Kazuma Sannomiya, Yuta Ohmi, Hiromasa Kakiuchi, Hiroaki Yasutake, Kiyoshi |
| Copyright Year | 2011 |
| Abstract | SiO2 films have been prepared by oxidizing n-type Si(001) wafers using atmospheric-pressure (AP) 0.5–5%O2 /He plasma at 300–450 °C. Structure, chemical composition, thickness and refractive index of the oxide films are investigated by infrared absorption spectroscopy, X-ray photoelectron spectroscopy and ellipsometry, respectively. Moreover, the electrical property of SiO2/Si interface is analyzed by capacitance–voltage measurement of Al/SiO2/Si capacitor. The results show that the low-temperature AP plasma oxidation process is capable of producing high-quality SiO2 films applicable for surface passivation of n-type Si surfaces. |
| Starting Page | 65 |
| Ending Page | 66 |
| Page Count | 2 |
| File Format | PDF HTM / HTML |
| DOI | 10.11522/pscjspe.2011S.0.65.0 |
| Alternate Webpage(s) | https://www.jstage.jst.go.jp/article/pscjspe/2011S/0/2011S_0_65/_pdf/-char/ja |
| Alternate Webpage(s) | https://doi.org/10.11522/pscjspe.2011S.0.65.0 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
