NDLI: An NPN Transistor Fabricated by Silicon Wafer Direct-Bonding

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An NPN Transistor Fabricated by Silicon Wafer Direct-Bonding

Content Provider	Semantic Scholar
Author	Atsuta, Masaki Ogura, Tsuneo Nakagawa, Akio Ohashi, Hiromichi
Copyright Year	1987
Abstract	Silicon Wafer Direct-Bonding (SDB) is a new technique which makes it possible to bond a pair of silicon wafers without any other material. A variety of SDB technique applications are foreseen for power devices or sensors. A bonded interface between heavily doped wafers shows good ohnic characteristics[1]. The 1800V Bipolar-Mode M0SFET (IGBT) is the first application, taking advantage of these ohmic characteristics for the bonded interfacelzl, The SDB technique could possibly be used to realize new devices which could not be realized by ordinary process techniques, if it can be successfully applied in the active regions inside the device. For example, impurity profiles in the base regions for a transistor or a Gate turn-off thyristor (GTO) can be inproved. This paper first reports the resistance of the bonded interface in the p-type substrate being measured. Second, NPN transistors, which have a bonded interface inside the p-base, were fabricated and evaluated in respect to current amplification factors. The bonded interface influence on minority carrier transport was investigated by comparing the measured results with nunerically simulated results.
File Format	PDF HTM / HTML
DOI	10.7567/SSDM.1987.A-3-2
Alternate Webpage(s)	https://confit.atlas.jp/guide/event-img/ssdm1987/A-3-2/public/pdf_archive?type=in
Alternate Webpage(s)	https://doi.org/10.7567/SSDM.1987.A-3-2
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article

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