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Properties of ZnO films grown on (0001) sapphire substrate using H2O and N2O as O precursors by atmospheric pressure MOCVD
| Content Provider | Semantic Scholar |
|---|---|
| Author | Dai, Jiangnan Su, Hongbo Wang, Li Ya Pu, Yong Fang, Wenqing Jiang, Fengyi |
| Copyright Year | 2006 |
| Abstract | Abstract In this paper, we compare the properties of ZnO thin films (0 0 0 1) sapphire substrate using diethylzinc (DEZn) as the Zn precursor and deionized water (H 2 O) and nitrous oxide (N 2 O) as the O precursors, respectively in the main ZnO layer growth by atmospheric pressure metal–organic chemical vapor deposition (AP-MOCVD) technique. Surface morphology studied by atomic force microscopy (AFM) showed that the N 2 O-grown ZnO film had a hexagonal columnar structure with about 8 μm grain diameter and the relatively rougher surface compared to that of H 2 O-grown ZnO film. The full-widths at half-maximum (FWHMs) of the (0 0 0 2) and ( 1 0 1 ¯ 2 ) ω -rocking curves of the N 2 O-grown ZnO film by double-crystal X-ray diffractometry (DCXRD) measurement were 260 and 350 arcsec, respectively, indicating the smaller mosaicity and lower dislocation density of the film compared to H 2 O-grown ZnO film. Compared to H 2 O-grown ZnO film, the free exciton A (FX A ) and its three phonon replicas could be clearly observed, the donor-bound exciton A 0 X ( I 10 ):3.353 eV dominated the 10 K photoluminescence (PL) spectrum of N 2 O-grown ZnO film and the hydrogen-related donor-bound exciton D 0 X ( I 4 ):3.363 eV was disappeared. The electron mobility (80 cm 2 /V s) of N 2 O-grown ZnO film has been significantly improved by room temperature Hall measurement compared to that of H 2 O-grown ZnO film. |
| Starting Page | 426 |
| Ending Page | 430 |
| Page Count | 5 |
| File Format | PDF HTM / HTML |
| DOI | 10.1016/j.jcrysgro.2006.01.009 |
| Volume Number | 290 |
| Alternate Webpage(s) | http://www.spm.com.cn/papers/1127.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |