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Micromechanical properties of silicon-carbide thin films deposited using single-source chemical-vapor deposition
| Content Provider | Semantic Scholar |
|---|---|
| Author | Stoldt, Conrad R. Fritz, Marcelo C. Carraro, Carlo Maboudian, Roya |
| Copyright Year | 2001 |
| Abstract | 1,3-Disilabutane is used as a single-source precursor to deposit conformal silicon-carbide films on silicon atomic-force-microscopy cantilevers. By measuring the resonance frequency of the cantilever as a function of silicon-carbide film thickness and developing an appropriate model, the value of the film’s elastic modulus is determined. This value is in good agreement with those reported for silicon-carbide films deposited using conventional dual-source chemical-vapor deposition. Additionally, we comment on the feasibility of integrating this process into the fabrication technology for microelectromechanical systems. |
| Starting Page | 347 |
| Ending Page | 349 |
| Page Count | 3 |
| File Format | PDF HTM / HTML |
| Volume Number | 79 |
| Alternate Webpage(s) | http://www.cchem.berkeley.edu/rmgrp/micro_properties.pdf |
| Alternate Webpage(s) | https://doi.org/10.1063/1.1383277 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
