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Hybrid orientation technology and strain engineering for ultra-high speed MOSFETs
| Content Provider | Semantic Scholar |
|---|---|
| Author | Maiti, T. K. Maiti, C. K. |
| Copyright Year | 2012 |
| Abstract | We report here RF MOSFET performance in sub-45-nm hybrid orientation CMOS technology. Based on the combination of hybrid orientation technology (HOT) and process-induced local strain engineering, MOSFET RF performance is investigated using CAD (TCAD) technology. Transistor optimization on (100) substrate via silicon nitride (Si3N4) cap layer thickness for n-MOSFETs, Ge mole fraction optimization for p-MOSFETs on (110) substrates and channel length scaling have resulted in record RF performance, viz. the cut-off frequency, ${f_{\rm T}}$. |
| Starting Page | 859 |
| Ending Page | 865 |
| Page Count | 7 |
| File Format | PDF HTM / HTML |
| DOI | 10.1007/s12034-012-0373-8 |
| Alternate Webpage(s) | https://www.ias.ac.in/article/fulltext/boms/035/05/0859-0865 |
| Alternate Webpage(s) | https://doi.org/10.1007/s12034-012-0373-8 |
| Volume Number | 35 |
| Journal | Bulletin of Materials Science |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
