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Extinction Ratio Improvement Due to a Bogatov-Like Effect in Ultralong Semiconductor Optical Amplifiers
| Content Provider | Semantic Scholar |
|---|---|
| Author | Runge, Patrick Elschner, Robert Bunge, C. A. Petermann, Klaus |
| Copyright Year | 2009 |
| Abstract | Theoretical results on the extinction ratio (ER) improvement in ultralong semiconductor optical amplifiers (UL-SOAs) are presented indicating a Bogatov-like effect in the saturated section. Starting from general nonlinear gain equations, an analytic description of the Bogatov-like effect is derived in terms of gain coefficients. These equations are used to explain the results of fully numerical simulations. The data signal's ER improves because of a two-step process. First, the data signal cross-gain modulates the additionally injected CW signal. Second, due to this inverse modulation, the data signal's states are differently amplified via the Bogatov-like effect. Since the ER improvement is caused by the fast intraband effects, this simple scheme has the potential for high-speed regeneration. |
| Starting Page | 629 |
| Ending Page | 636 |
| Page Count | 8 |
| File Format | PDF HTM / HTML |
| DOI | 10.1109/JQE.2009.2013113 |
| Volume Number | 45 |
| Alternate Webpage(s) | http://www.hft.tu-berlin.de/fileadmin/fg154/Veroeffentlichungen/2009/JQE_Runge.pdf |
| Journal | IEEE Journal of Quantum Electronics |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
