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Mask shop at the Institute of Electronic Materials Technology
| Content Provider | Semantic Scholar |
|---|---|
| Author | Lech, Dobrzański |
| Copyright Year | 1997 |
| Abstract | Responding to recent demands from the advanced technologies of submicron Uthography since 1991ITME has used an electron-beam exposure system ZBA-20 (Carl-Zeiss-Jena) for generation of primary patterns. ZBA-20 operates on the variable shaped beam and vector scan principle and this concept compared to the Gaussian round beam principle yields a much higher productivity. Because of this advantage we successfully use ZBA-20 in two main fields of applications: • fabrications of master masks and reticles for contact, proximity and projection lithography, especially for large-area structures, like IR and nuclear radiation detectors or SAW filters , resonators and sensors. • direct exposure of semiconductors wafers, especially to be used in the sub-0.5-micrometer range ( e.g. monolithic microwave integrated circuits). As demonstrator from the first field of applications we manufactured microstrip detectors of very large area, that are needed in high energy physics. We recommend to our customers to order directly detector structures to avoid problems of pattern deterioration during the transfer from mask to substrate, since large areas of exactly contacting surfaces can cause problems during the separation of mask from the surface after the exposition. Using e-beam technology we provide chromium masks with critical dimension (minimum linewidth) on level 0.5 ^m and a pattern with minimum size of 0.2 |im (and better) for direct writing process. The detailed specification of both methods is shown in Tkble 1. |
| Starting Page | 17 |
| Ending Page | 18 |
| Page Count | 2 |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | http://rcin.org.pl/Content/39006/WA901_55857_r1997-z3_MST-Dobrzanski-mask_i.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
