Apparatus and Method for Avodance of Parasitic Plasman Plasma Source Gas Supply Conduits Background of the Invention

Content Provider	Semantic Scholar
Copyright Year	2017
Abstract	(57) ABSTRACT (75) Inventors: Soo Young Choi, Fremont, CA (US); John M. White, Hayward, CA (US) It has been discovered that a parasitic plasma problem which has existed with respect to the incoming plasma Source gases Correspondence Address: SHIRLEY L. CHURCH, ESQ. P.O. BOX81146 SAN DIEGO, CA 92.138 (US) to an processing chamber plasma generation system for PECVD thin film deposition can be avoided. The stability of a parasitic plasma is avoided by increasing the pressure in a conduit through which the plasma source gases flow. While avoidance of formation of a parasitic plasma in plasma (73) Assignee: Applied Materials, Inc. Source gas conduits leading to the processing chamber (21) Appl. No.: 11/430,759 plasma generation system may be achieved by inserting a fixed restrictor in a conduit through which the plasma Source (22) Filed: May 9, 2006 gases flow, use of a variable Surface restrictor in the conduit Publication Classification enables not only avoidance of the formation of a parasitic plasma in incoming plasma Source gases, but also easier (51) Int. Cl. cleaning of the processing chamber plasma generation sys B05D 3/00 (2006.01) tem when a remotely generated plasma is used for Such C23C I6/00 (2006.01) cleaning.
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Resource Type	Patent