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Energetics of hydrogen in amorphous silicon: An ab initio study
| Content Provider | Semantic Scholar |
|---|---|
| Author | Tuttle, Blair R. Adams, James B. |
| Copyright Year | 1998 |
| Abstract | Using ab initio density-functional calculations, we investigate the energetics of hydrogen in amorphous silicon. We compare a hydrogen atom at a silicon bond center site in a-Si to one in c-Si. In addition, we identify the energetics of the dominant traps for H in a-Si. The present calculations are used to elucidate many experiments and concepts regarding hydrogen in amorphous silicon including the role of H in equilibrium electronic defect formation. @S0163-1829~98!09119-X# |
| Starting Page | 12859 |
| Ending Page | 12868 |
| Page Count | 10 |
| File Format | PDF HTM / HTML |
| DOI | 10.1103/PhysRevB.57.12859 |
| Alternate Webpage(s) | http://publish.aps.org/eprint/gateway/epget/aps1997jun24_005/derived/main.ps |
| Alternate Webpage(s) | https://doi.org/10.1103/PhysRevB.57.12859 |
| Volume Number | 57 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |