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High Performance AlGaN / GaN HEMTs on Semi-Insulating SiC Substrates Grown by Metalorganic Chemical Vapor Deposition
| Content Provider | Semantic Scholar |
|---|---|
| Author | Wong, Michael M. Sicault, Delphine Chowdhury, Uttiya Denyszyn, Jonathan C. Zhu, Ting Gang Dupuis, Russell D. Becher, David T. Feng, Milton |
| Copyright Year | 2002 |
| Abstract | The performance of an innovative delta-doped AlGaN/AlN/GaN high-electron-mobility transistor (HEMT) structure is reported. The epitaxial heterostructures were grown on semi-insulating SiC substrates by low-pressure metalorganic chemical vapor deposition. These structures exhibit a maximum carrier mobility of 1,058 cm2/V-s and a sheet carrier density of 2.35×1013 cm-2 at room temperature, corresponding to a large nsμn product of 2.49x1016 /V-s. HEMT devices with 0.25 μm gate length were fabricated and exhibited a maximum current density as high as 1.5 A/mm (at VG = +1V) and a peak transconductance of gm = 240 mS/mm. Highfrequency device measurements yielded a cutoff frequency of ft ~ 50 GHz and maximum oscillation frequency fmax ~ 130 GHz. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | http://csmantech.pairserver.com/Digests/2002/PDF/10b.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
