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Carrier induced ferromagnetism in room temperature ferromagnetic semiconductor rutile TiO2 doped with Co
| Content Provider | Semantic Scholar |
|---|---|
| Author | Toyosaki, Hidemi Fukumura, Tomoteru Yamada, Yuh Nakajima, Kaoru Chikyow, Toyohiro Hasegawa, Tokiya Koinuma, Hideomi Kawasaki, Mitsunori |
| Copyright Year | 2003 |
| Abstract | A ferromagnetic semiconductor, rutile (Ti,Co)O2, exhibits anomalous Hall effect at room temperature. Strong dependence of the anomalous Hall effect, as well as the magneto-optic response, on the carrier concentration suggests carrier induced ferromagnetism in this compound. Both ferromagnetic responses are caused by the charge carriers at the band edge of host semiconductor, indicating possibilities of spintronics devices operable at room temperature. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://arxiv.org/pdf/cond-mat/0307760v1.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
