Loading...
Please wait, while we are loading the content...
Similar Documents
Interface barriers at the interfaces of polar GaAs(111) faces with Al2O3
| Content Provider | Semantic Scholar |
|---|---|
| Author | Chou, H.-Y. O'Connor, E. Hurley, Paul K. Afanas'ev, Valeri Houssa, Michel Stesmans, A. Ye, Peide D. Newcomb, Simon B. |
| Copyright Year | 2012 |
| Abstract | Internal photoemission measurements of barriers for electrons at interfaces between GaAs(111) and atomic-layer deposited Al2O3 indicate that changing the GaAs polar crystal face orientation from the Ga-terminated (111)A to the As-terminated (111)B has no effect on the barrier height and remains the same as at the non-polar GaAs(100)/Al2O3 interface. Moreover, the presence of native oxide on GaAs(111) or passivation of this surface with sulphur also have no measurable influence on the GaAs(111)/Al2O3 barrier. These results suggest that the orientation and composition-sensitive surface dipoles conventionally observed at GaAs surfaces are effectively compensated at GaAs/oxide interfaces. |
| Starting Page | 141602 |
| Ending Page | 141602 |
| Page Count | 1 |
| File Format | PDF HTM / HTML |
| DOI | 10.1063/1.3698461 |
| Alternate Webpage(s) | https://cora.ucc.ie/bitstream/handle/10468/4301/3276.pdf?isAllowed=y&sequence=1 |
| Alternate Webpage(s) | http://docs.lib.purdue.edu/cgi/viewcontent.cgi?article=2217&context=nanopub |
| Alternate Webpage(s) | https://engineering.purdue.edu/~yep/Papers/ApplPhysLett_U%20Leuven_GaAs%20111A_PLE.pdf |
| Alternate Webpage(s) | https://doi.org/10.1063/1.3698461 |
| Volume Number | 100 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
