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Choosing a thermal model for electrothermal simulation of power semiconductor devices
| Content Provider | Semantic Scholar |
|---|---|
| Author | Ammous, Anis Ghedira, Sami Allard, Bruno Morel, Hervé Renault, D. |
| Copyright Year | 2017 |
| Abstract | The literature proposes some thermal models needed for the electrothermal simulation of power electronic systems. This paper gives a useful analysis about the choice of the thermal model circuit networks, equivalent to a discretization of the heat equation by the finite difference method (FDM) and the finiteelement method (FEM), and an analytic model developed by applying an internal approximation of the heat diffusion problem. The effect of the boundary condition representation and the introduced errors on temperature response at the heat source are studied. This study is advantageous, particularly for large surges of a short time duration. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://hal.archives-ouvertes.fr/hal-00140099/document |
| Language | English |
| Access Restriction | Open |
| Subject Keyword | Approximation Discretization Finite difference method Finite element method Glossary of computer graphics Power electronics Semiconductor device Semiconductors Simulation |
| Content Type | Text |
| Resource Type | Article |
