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Mechanisms of process-induced heating of MEMS structures during plasma release etch
| Content Provider | Semantic Scholar |
|---|---|
| Author | Du, Liqun Arai, Fumihito Kwon, Guiryong Fukuda, Toshio Itoigawa, Kouichi Tsukahara, Yasunori |
| Copyright Year | 2010 |
| Abstract | The temperature rise on suspended MEMS structures during a Si plasma release etch process is investigated experimentally using in situ infrared imaging. The process is performed on a commercially available inductively coupled plasma etch chamber and comprises an anisotropic, Bosch-type Si DRIE step, an O2 inhibitor removal step and a SF6 isotropic Si etch. Temperatures up to 150°C were observed during the isotropic etch and indicate the exothermic reaction of Si and F is the dominant source of heat. Temperature trends with test structure geometry suggest interplay between radiative cooling and etchant transport determines maximum structure temperature. |
| Starting Page | 320 |
| Ending Page | 323 |
| Page Count | 4 |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://static.aminer.org/pdf/PDF/000/351/816/dynamic_analysis_of_micro_touch_sensor_array_synthesized_by_hydrothermal.pdf |
| Journal | 2010 IEEE 23rd International Conference on Micro Electro Mechanical Systems (MEMS) |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
