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Preparation of Epitaxial YSZ Thin Film Deposited on SiO2/Si(001) at Room Temperature by Pulsed Laser Deposition (PLD)
| Content Provider | Semantic Scholar |
|---|---|
| Author | Ishigaki, Hirokazu Yamada, Tomoaki Wakiya, Naoki Sinozaki, Kazuo Mizutani, Nobuyasu |
| Copyright Year | 2002 |
| Abstract | YSZ thin films were deposited by pulsed laser deposition (PLD) on Si(001) with native SiO2, H-terminated Si(001) and ablated Si on H-terminated Si(001) at various temperatures (800, 600, 400, 200°C and RT (room temperature)). The crystallinity of YSZ thin film on Si(001) with native oxide was the highest among the three substrates. YSZ thin film on ablated Si on H-terminated Si(001) was amorphous. We suggest that an ultrathin SiO2 layer (<1.1nm) is necessary for crystal growth of YSZ thin film. A two-step process was attempted to prepare epitaxial YSZ thin films. First, YSZ thin films were deposited on Si(001) with native SiO2 at 800°C in 8.0×10-5Pa O2 (reduction condition). Second, YSZ thin films were deposited on Si(001) with native SiO2 at various temperatures (800, 600, 400, 200°C and RT) in 7.3×10-2Pa O2. All YSZ thin films deposited by a two-step process were epitaxial. The reason for this mechanism is discussed. |
| Starting Page | 333 |
| Ending Page | 337 |
| Page Count | 5 |
| File Format | PDF HTM / HTML |
| Volume Number | 110 |
| Alternate Webpage(s) | https://www.jstage.jst.go.jp/article/jcersj1988/110/1281/110_1281_333/_pdf/-char/en |
| Alternate Webpage(s) | https://doi.org/10.2109/jcersj.110.333 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
