Loading...
Please wait, while we are loading the content...
Similar Documents
Selective lift-off of GaN light-emitting diode from a sapphire substrate using 266-nm diode-pumped solid-state laser irradiation
| Content Provider | Semantic Scholar |
|---|---|
| Author | Kim, Jaegu Kim, Jae-Hyun Cho, Sung-Hak Whang, Kyung-Hyun |
| Copyright Year | 2016 |
| Abstract | Selective laser lift-off of GaN from a sapphire substrate was demonstrated using 266-nm diode-pumped solid-state laser irradiation. To fabricate a single GaN light-emitting diode (LED) with a size of 100 μm × 100 μm, we used a simple direct scanning technique with a defocused beam and investigated the lift-off parameter in terms of the intensity. Two processing windows corresponding to lower- and higher-intensity regimes were observed experimentally. In the lower-intensity regime, the larger beam size worked better than with the higher regime. Although fluence is generally explained as a processing condition, the total input fluence for a single LED was not crucial to lift-off in case of the scanning technique using a defocused laser beam. However, an intensity of ~37 kW/cm2 was required to initiate the thermal decomposition reaction in GaN at any sample position. |
| Starting Page | 1 |
| Ending Page | 6 |
| Page Count | 6 |
| File Format | PDF HTM / HTML |
| DOI | 10.1007/s00339-016-9928-7 |
| Volume Number | 122 |
| Alternate Webpage(s) | http://www.femto-kimm.kr/pdf/Paper/International/2016_53.pdf |
| Alternate Webpage(s) | https://doi.org/10.1007/s00339-016-9928-7 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
