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Investigation of Conventional Bipolar Logic Technologies in 4H-SiC for Harsh Environment Applications
| Content Provider | Semantic Scholar |
|---|---|
| Author | Elgabra, Hazem Siddiqui, Amna Singh, Shakti |
| Copyright Year | 2015 |
| Abstract | Silicon Carbide (SiC) is a wide bandgap semiconductor capable of robust operation in extreme environments. Thus far, SiC research has been geared primarily towards developing discreet devices. These devices are controlled by silicon-based circuitry, limiting the overall efficiency of the system in such environments. For this purpose, 4H-SiC integrated circuits (ICs), based on different conventional logic technologies, have been investigated using different device structures by various research groups. This paper presents, for the first time, a thorough investigation of conventional bipolar logic technologies in 4H-SiC across a wide range of temperatures (27 C – 500 C) and power supply voltages (7 V – 17 V). Unlike previous studies, this paper evaluates different technologies using the same device structure to highlight the true merits of each logic technology. |
| File Format | PDF HTM / HTML |
| DOI | 10.7567/ssdm.2015.ps-14-18l |
| Alternate Webpage(s) | https://confit.atlas.jp/guide/event-img/ssdm2015/PS-14-18L/public/pdf_archive?type=in |
| Alternate Webpage(s) | https://doi.org/10.7567/ssdm.2015.ps-14-18l |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
