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Optical Properties of GaAs Quantum Dots Fabricated by Filling of Self-Assembled Nanoholes
| Content Provider | Semantic Scholar |
|---|---|
| Author | Heyn, Christian Stemmann, Andrea Köppen, Thomas Strelow, Ch Kipp, Tobias Grave, M. Mendach, Stefan Hansen, Wolfgang Von |
| Copyright Year | 2009 |
| Abstract | Experimental results of the local droplet etching technique for the self-assembled formation of nanoholes and quantum rings on semiconductor surfaces are discussed. Dependent on the sample design and the process parameters, filling of nanoholes in AlGaAs generates strain-free GaAs quantum dots with either broadband optical emission or sharp photoluminescence (PL) lines. Broadband emission is found for samples with completely filled flat holes, which have a very broad depth distribution. On the other hand, partly filling of deep holes yield highly uniform quantum dots with very sharp PL lines. |
| Starting Page | 576 |
| Ending Page | 580 |
| Page Count | 5 |
| File Format | PDF HTM / HTML |
| PubMed reference number | 20672041 |
| Volume Number | 5 |
| Journal | Nanoscale research letters |
| Alternate Webpage(s) | https://nanoscalereslett.springeropen.com/track/pdf/10.1007/s11671-009-9507-3?site=nanoscalereslett.springeropen.com |
| Language | English |
| Access Restriction | Open |
| Subject Keyword | Eye Fill Iodine I 124-cRGDY-PEG-C Dots Optics Photoluminescence Quantum Dots Ring device Semiconductors Tissue fiber gallium arsenide indium arsenide tomography |
| Content Type | Text |
| Resource Type | Article |