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Low-voltage C60 organic field-effect transistors with high mobility and low contact resistance
| Content Provider | Semantic Scholar |
|---|---|
| Author | Zhang, Xinghang Kippelen, Bernard |
| Copyright Year | 2008 |
| Abstract | State-of-the-art C60 organic transistors are reported here by engineering the essential electrode/semiconductor and dielectric/semiconductor interfaces. By using calcium (Ca) as the source and drain electrodes, the width-normalized contact resistance (RCW) at the electrode/semiconductor interface could be reduced to a constant value of 2 kΩ cm at a gate-source voltage (VGS) of 2.6 V, for devices with channel lengths ranging from 25 to 200 μm. Channel transconductance is observed to follow channel length scaling, and charge mobility average value of 2.5 cm2/Vs at VGS<5 V is found independent of channel length within the studied range. |
| Starting Page | 133305 |
| Ending Page | 133305 |
| Page Count | 1 |
| File Format | PDF HTM / HTML |
| DOI | 10.1063/1.2993349 |
| Volume Number | 93 |
| Alternate Webpage(s) | https://smartech.gatech.edu/bitstream/handle/1853/45547/COPE_018.pdf |
| Alternate Webpage(s) | https://doi.org/10.1063/1.2993349 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
