Formation of Ni germano-silicide on single crystalline Si/sub 0.3/Ge/sub 0.7//Si

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Formation of ni germano-silicide on single crystalline si.

La/sub 2/O/sub 3//Si/sub 0.3/Ge/sub 0.7/ p-MOSFETs and Ni germano-silicide

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High room temperature hole mobility in Ge/sub 0.7/Si/sub 0.3//Ge/Ge/sub 0.7/Si/sub 0.3/ modulation doped heterostructures in the absence of parallel conduction

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Gate current and oxide reliability in p/sup +/ poly MOS capacitors with poly-Si and poly-Ge/sub 0.3/Si/sub 0.7/ gate material

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Si/sub 0.7/Ge/sub 0.3/ Quantum Dot Formation by Interface Agglomeration

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P-Si/sub 0.3/Ge/sub 0.7/and p-Si/sub 0.2/Ge/sub 0.8/ MOSFETs of enhanced performance

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Influence of gate width on 50 nm gate length Si/sub 0.7/Ge/sub 0.3/ channel PMOSFETs

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Changes in surface chemical structure of BF$_{3}$ plasma doped Si$_{0.7}$Ge$_{0.3}$ films

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