Loading...
Please wait, while we are loading the content...
Similar Documents
Power SiGe Heterojunction Bipolar Transistors (HBTs) Fabricated by Fully Self-Aligned Double Mesa Technology
| Content Provider | Semantic Scholar |
|---|---|
| Author | Liang-Hung George Sámuel Alterovitz, A. Karl Strohm, Miriam Johann-Friedrich Pallab Bhattacharya Linda Katehi, P. B. |
| Abstract | Multifinger SiGe HBTs have been fabricated using a novel fully self-aligned double-mesa technoloD'. With the novel process technology, a common-emitter 2x2x30 gm 2 de_ice exhibits high maximum oscillating frequency (f_od and cut-off frequency (/f:) of 78 and 37 GHz, respectively. In class-A operation, a multifinger device with 10×2x30 gm z emitter is expected to provide an output power of 25.6 dBm _ith a gain of 10 dB and a maximum power added efficiency (PAE) of 30.33% at 8 GHz. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://ntrs.nasa.gov/archive/nasa/casi.ntrs.nasa.gov/20010061488.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
