Strain relaxation and critical temperature in epitaxial ferroelectric Pb(Zr0.20Ti0.80)O3 thin films

Content Provider	Semantic Scholar
Author	Gariglio, Stefano Stucki, Nicolas Triscone, Jean-Marc Triscone, Gilles
Copyright Year	2007
Abstract	Strain relaxation and the ferroelectric critical temperature were investigated in a series of epitaxial Pb(Zr0.20Ti0.80)O3 thin films of different thicknesses grown on metallic 0.5% Nb-doped SrTiO3 substrates. Detailed x-ray diffraction studies reveal that strain relaxation progressively occurs via misfit dislocations as the film thickness is increased from fully coherent films (for films below 150A) to essentially relaxed films (for thicknesses above typically 800A). It is found that this change in the strain state does not modify the ferroelectric critical temperature which is found for all the samples to be around 680°C, a value much higher than the bulk.
Starting Page	202905
Ending Page	202905
Page Count	1
File Format	PDF HTM / HTML
DOI	10.1063/1.2740171
Volume Number	90
Alternate Webpage(s)	https://archive-ouverte.unige.ch/files/downloads/0/0/1/1/4/2/7/1/unige_114271_attachment01.pdf
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article