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Exfoliated-graphene/MoS 2 /metal Vertical Field Effect Transistor with Large Current Modulation and On Current Density
| Content Provider | Semantic Scholar |
|---|---|
| Author | Moriya, Rai Yamaguchi, Takehiro Inoue, Yoshihisa Sata, Yohta Yabuki, Naoto Morikawa, Sei Masubuchi, Satoru Machida, Tomoki |
| Copyright Year | 2014 |
| Abstract | Owing to the absence of a band gap, the direct applicability of graphene for transistors and logic devices is still limited. Recent studies have shown that the van der Waals heterostructure of graphene and other materials can be a great candidate to overcome these issues; such heterostructures demonstrated vertical field effect transistor (FET) operations as well as large current ON-OFF ratio. However, realization of a large ON-OFF ratio simultaneously with a large ON current density has been still challenging and not demonstrated yet. In our study, we fabricated a graphene/MoS2/metal vertical heterostructure by using mechanical exfoliation and dry transfer of graphene and MoS2 layers. The van der Waals interface between graphene and MoS2 exhibits a well-defined Schottky barrier, and this barrier height is strongly modulated by an external gate electric field. We obtained a large current ON-OFF ratio exceeding 10 simultaneously with a large ON current density of ~10 A/cm. We believe that our fabricated devices reveal superior performance to other existing graphene-based vertical transistors and present an important advance toward electronics applications. |
| File Format | PDF HTM / HTML |
| DOI | 10.7567/SSDM.2014.H-1-3 |
| Alternate Webpage(s) | https://confit.atlas.jp/guide/event-img/ssdm2014/H-1-3/public/pdf_archive?type=in |
| Alternate Webpage(s) | https://doi.org/10.7567/SSDM.2014.H-1-3 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
