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Thin film bi-epitaxy and transition characteristics of TiO 2 /TiN buffered VO 2 on Si(100) substrates
| Content Provider | Semantic Scholar |
|---|---|
| Author | Moatti, Adele Bayati, R. Srinivasa Rao Singamaneni Narayan, Jagdish |
| Copyright Year | 2016 |
| Abstract | Bi-epitaxial VO 2 thin films with [011] out-of-plane orientation were integrated with Si(100) substrates through TiO 2 /TiN buffer layers. At the first step, TiN is grown epitaxially on Si(100), where a cube-on-cube epitaxy is achieved. Then, TiN was oxidized in-situ ending up having epitaxial r-TiO 2 . Finally, VO 2 was deposited on top of TiO 2 . The alignment across the interfaces was stablished as VO 2 (011)║TiO 2 (110)║TiN(100)║Si(100) and VO 2 (110) /VO 2 (010)║TiO 2 (011)║TiN(112)║Si(112). The inter-planar spacing of VO 2 (010) and TiO 2 (011) equal to 2.26 and 2.50 A, respectively. This results in a 9.78% tensile misfit strain in VO 2 (010) lattice which relaxes through 9/10 alteration domains with a frequency factor of 0.5, according to the domain matching epitaxy paradigm. Also, the inter-planar spacing of VO 2 (011) and TiO 2 (011) equals to 3.19 and 2.50 A, respectively. This results in a 27.6% compressive misfit strain in VO 2 (011) lattice which relaxes through 3/4 alteration domains with a frequency factor of 0.57. We studied semiconductor to metal transition characteristics of VO 2 /TiO 2 /TiN/Si heterostructures and established a correlation between intrinsic defects and magnetic properties. |
| Starting Page | 2635 |
| Ending Page | 2640 |
| Page Count | 6 |
| File Format | PDF HTM / HTML |
| DOI | 10.1557/adv.2016.544 |
| Volume Number | 1 |
| Alternate Webpage(s) | https://www.cambridge.org/core/services/aop-cambridge-core/content/view/3A27FC5A657999A58307BD76B171D52F/S2059852116005442a.pdf/div-class-title-thin-film-bi-epitaxy-and-transition-characteristics-of-tio-span-class-sub-2-span-tin-buffered-vo-span-class-sub-2-span-on-si-100-substrates-div.pdf |
| Alternate Webpage(s) | https://www.cambridge.org/core/services/aop-cambridge-core/content/view/3A27FC5A657999A58307BD76B171D52F/S2059852116005442a.pdf/thin_film_biepitaxy_and_transition_characteristics_of_tio2tin_buffered_vo2_on_si100_substrates.pdf |
| Alternate Webpage(s) | https://doi.org/10.1557/adv.2016.544 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
