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Nickel-Silicided Schottky Junction CMOS Transistors With Gate-All-Around Nanowire Channels
| Content Provider | Semantic Scholar |
|---|---|
| Author | Singh, Navab Chin, Y. K. Tang, L. J. |
| Copyright Year | 2008 |
| Abstract | We demonstrate high-performance Schottky CMOS transistors with NiSi source/drain and gate-all-around (GAA) silicon nanowire (~5 nm) channels. The transistors exhibit good I on/I off characteristics, along with fully controlled shortchannel effects revealed by low drain-induced barrier lowering (~10 mV/V) and near-ideal subthreshold swing (~60 mV/dec). Although the N-MOSFET required dopant segregation to suppress the ambipolar behavior, excellent P-MOSFET characteristics could be achieved without the use of barrier modification techniques. We attribute this to the Schottky barrier thinning in a nanosized metal-semiconductor junction and superior gate electrostatic control in a GAA nanowire architecture. |
| Starting Page | 902 |
| Ending Page | 905 |
| Page Count | 4 |
| File Format | PDF HTM / HTML |
| DOI | 10.1109/LED.2008.2000876 |
| Volume Number | 29 |
| Alternate Webpage(s) | https://dr.ntu.edu.sg/bitstream/handle/10220/8344/50.%20Nickel%20silicided%20Schottky%20junction%20CMOS%20transistors%20with%20gate-all-around.pdf;jsessionid=5BB195C2F1892643BCEDF632B6C98FB9?sequence=2 |
| Alternate Webpage(s) | https://dr.ntu.edu.sg/bitstream/handle/10220/8344/50.%20Nickel%20silicided%20Schottky%20junction%20CMOS%20transistors%20with%20gate-all-around.pdf?isAllowed=y&sequence=2 |
| Alternate Webpage(s) | https://dr.ntu.edu.sg/bitstream/handle/10220/8344/50.%20Nickel%20silicided%20Schottky%20junction%20CMOS%20transistors%20with%20gate-all-around.pdf;jsessionid=D31E70FE28D751C523353B5E05058832?sequence=2 |
| Journal | IEEE Electron Device Letters |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
