NDLI: Characterization of Atomic Layer Deposited WNxCy Thin Film as a Diffusion Barrier for Copper Metallization

Please wait, while we are loading the content...

Characterization of Atomic Layer Deposited WNxCy Thin Film as a Diffusion Barrier for Copper Metallization

Content Provider	Semantic Scholar
Author	Kim, Soo Hyun Kim, Hyun Mee Kang, Dae-Hwan Li, Wei-Min Haukka, Suvi Tuominen, Marko
Copyright Year	2004
Abstract	The film properties of WNxCy films deposited by atomic layer deposition (ALD) using WF6 ,N H 3, and triethylboron source gases were characterized as diffusion barrier for Cu metallization. It is noted that the as-deposited film shows an extremely low resistivity of about 350 µΩ-cm with a film density of 15.37 g/cm 3 . The film composition measured from Rutherford backscattering spectrometry shows W, C, and N of approximately 48, 32, and 20 at.%, respectively. Transmission electron microscopy analyses show that the as-deposited film is composed of face-centered-cubic phase with a lattice parameter similar to both β-WC1-x and βW2N with an equiaxed microstructure. The barrier property of this ALD-WNxCy film at a nominal thickness of 12 nm deposited between Cu and Si fails only after annealing at 700 o Cf or 30 minutes while the sputter-deposited Ta (12 nm) and ALD-TiN (20 nm) fail at 650 and 600 o C, respectively. It is thought that the superior diffusion barrier performance of ALD-WNxCyfilm is the consequence of both nanocrystalline equiaxed grain structure and the formation of high density film.
File Format	PDF HTM / HTML
DOI	10.1149/1.1652054
Volume Number	151
Alternate Webpage(s)	http://www.webpages.uidaho.edu/nanomaterials/research/Papers/Barriers/W/Characteristics%20of%20ALD%20WNC%20MRS%20766%202003%20E10_9.pdf
Alternate Webpage(s)	https://doi.org/10.1149/1.1652054
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article

Central Library (ISO-9001:2015 Certified)
Indian Institute of Technology Kharagpur
Kharagpur, West Bengal, India | PIN - 721302

See location in the Map
03222 282435
Mail: support@ndl.gov.in

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in