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Phase diagram of thermoelectric Bi 2 S 3-Bi 2 Se 3-Bi 2 Te 3 system
| Content Provider | Semantic Scholar |
|---|---|
| Author | Liu, Weishu Zhang, Qinyong Zhang, Qian Chen, Gang |
| Copyright Year | 2012 |
| Abstract | Submitted for the MAR11 Meeting of The American Physical Society Phase diagram of thermoelectric Bi2S3-Bi2Se3-Bi2Te3 system WEISHU LIU, QINYONG ZHANG, QIAN ZHANG, Boston College, BO YU, GANG CHEN, ZHIFENG REN, Boston College, BOSTON COLLEGE TEAM, MIT TEAM — It is well known that the highest ZT value, at an optimized carrier concentration, is mainly determined by a material parameter β = μ(m*/m0)3/2/κlat, where μ(m*/m0)3/2 and κlat are the weighted carrier mobility and lattice thermal conductivity, respectively. In order to explore some new compositions in Bi2S3Bi2Se3-Bi2Te3 system, we propose a compositional thermoelectric phase diagram (TPD), including weighted carrier mobility, lattice thermal conductivity, and material parameter, for the 1% copper doped Bi2S3-Bi2Se3-Bi2Te3 solid solution fabricated by MA-HP method. Here, the μ(m*/m0)3/2 and κlat values could be deduced from the measured electrical resistivity, Seebeck coefficient, and thermal conductivity. The alloying effect on the thermoelectric phase diagram will be discussed from varying atomic size, chemical bond, lattice structure, etc. Weishu Liu Boston College Date submitted: 22 Nov 2010 Electronic form version 1.4 |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | http://absimage.aps.org/image/MAR11/MWS_MAR11-2010-002811.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
