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Electrical Properties of Synthesized Large-Area MoS₂ Field-Effect Transistors Fabricated with Inkjet-Printed Contacts.
| Content Provider | Semantic Scholar |
|---|---|
| Author | Kim, Tae-Young Amani, Matin Ahn, Geun Ho Song, Younggul Javey, Ali Chung, Seungjun Lee, Takhee |
| Copyright Year | 2016 |
| Abstract | We report the electrical properties of synthesized large-area monolayer molybdenum disulfide (MoS2) field-effect transistors (FETs) with low-cost inkjet-printed Ag electrodes. The monolayer MoS2 film was grown by a chemical vapor deposition (CVD) method, and the top-contact Ag source/drain electrodes (S/D) were deposited onto the films using a low-cost drop-on-demand inkjet-printing process without any masks and surface treatments. The electrical characteristics of FETs were comparable to those fabricated by conventional deposition methods such as photo- or electron beam lithography. The contact properties between the S/D and the semiconductor layer were also evaluated using the Y-function method and an analysis of the output characteristic at the low drain voltage regimes. Furthermore, the electrical instability under positive gate-bias stress was studied to investigate the charge-trapping mechanism of the FETs. CVD-grown large-area monolayer MoS2 FETs with inkjet-printed contacts may represent an attractive approach for realizing large-area and low-cost thin-film electronics. |
| File Format | PDF HTM / HTML |
| DOI | 10.1021/acsnano.5b07942 |
| PubMed reference number | 26820160 |
| Journal | Medline |
| Volume Number | 10 |
| Issue Number | 2 |
| Alternate Webpage(s) | http://nano.eecs.berkeley.edu/publications/ACSNano_2016_MoS2-printed%20contacts.pdf |
| Journal | ACS nano |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
