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Silicon to Nickel Silicide Longitudinal Nanowire Heterostructures: Synthesis, Electrical Characterization and Novel Devices
| Content Provider | Semantic Scholar |
|---|---|
| Author | Weber, Walter M. |
| Copyright Year | 2008 |
| Abstract | The scope of this thesis is the synthesis and electrical characterization of Si to Ni silicide nanowire heterostructures with the focus on investigating their electronic transport properties and conceiving a novel type of transistor. Intrinsic Si nanowires (SiNW) were grown employing the vapor-liquid-solid mechanism. A central part of this thesis is the development of the longitudinal intrusion of Ni silicide into the SiNWs resulting in interfaces with a sharpness of at most a couple of nanometers. Schottky barrier field effect transistors (SBFET) were formed from Ni silcide / Si Ni silicide nanowire heterostructures, exhibiting p-conductance record current densities and on/off current ratios for intrinsic SiNW SBFETs. The gate potential could effectively tune the Schottky barrier width to control current injection. It was shown that the device polarity was exclusively controlled by the Schottky junctions. A novel device concept was developed, where each Schottky contact is independently gated. The same SiNW SBFET could be tuned to enable n-type as well as p-type operation, completely avoiding doping. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://mediatum.ub.tum.de/download/654514/654514.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
