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Low-temperature growth of highly conductive and transparent aluminum-doped ZnO film by ultrasonic-mist deposition
| Content Provider | Semantic Scholar |
|---|---|
| Author | Seo, Seunghwan Won, Sung Ho Chae, Heeyeop Cho, S. M. |
| Copyright Year | 2012 |
| Abstract | −Aluminum-doped ZnO (AZO) thin films are grown by ultrasonic-mist deposition method for the transparent conducting oxides (TCO) applications at low temperatures. The AZO films can be grown at a temperature as low as 200 oC with zinc acetylacetonate and aluminum acetylacetonate sources. The lowest resistivity of grown AZO films is 1.0×10−3Ω·cm and the lowest sheet resistance of 1 μm thick films is 10Ω/□ , which is close to that of commercial indium tin oxide (ITO) or Asahi U-type SnO2 : F glass. The highest carrier concentration and mobility are 5.6×10 20 cm−3 and 15 cm2/V·sec, respectively. Optical transmittance of the AZO films is found over 75% for all growth conditions. We believe that the properties of grown AZO films in this study are the best among all reported previously elsewhere by solution processes. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://www.cheric.org/PDF/KJChE/KC29/KC29-4-0525.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
